, o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUX10 high power npn silicon transistor . sgs-thomson preferred salestype . npn transistor . high current capability . fast switching speed applications . motor control . linear and switching industrial equipment description the BUX10 is a silicon multiepitaxial planar npn transistor in jedec to-3 metal case, intended for use in switching and linear applications in military and industrial equipment. internal schematic diagram itab'i absolute maximum ratings symbol vcbo vcex vceo vebo ic icm ib plot tstg tj parameter collector-base voltage (ie = 0) collector-emitter voltage (vbe = - 1.5v) collector-emitter voltage (le = 0) emitter-base voltage (ic = 0) collector current collector peak current (tp = 10 rns) base current total power dissipation at tcase < 25 c storage temperature max operating junction temperature value 160 160 125 7 25 30 5 150 -65 to 200 200 unit v v v v a a a w c c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BUX10 thermal data rthj-c thermal resistance junction-case max 1.17 c/w electrical characteristics (tease = 25 c unless otherwise specified) symbol iceo icex iebo vceo(sus)* vebo vce(sat)* vbe(sat)* llfe is/b fr ton ts tf parameter collector cut-off current (is = 0) collector cut-off current emitter cut-off current (lc = 0) collector-emitter sustaining voltage emitter-base voltage (lc = 0) collector-emitter saturation voltage base-emitter saturation voltage dc current gain second breakdown collector current transistor frequency turn-on time storage time fall time clamped es/b collector current test conditions vce= 100v vce=160v vbe = -1.5v tease = 125 c vce=160v vbe = -1.5v veb = 5 v ic = 200 ma ie = 50 ma ic = 10 a ib = 1 a lc = 20a ib = 2a ic = 20a ib = 2a lc = 10a vce = 2v ic = 20 a vce = 4 v vce = 30 v t = 1 s vce = 48 v t = 1 s lc=1a vce =15 v f = 10mhz lc = 20a ib1=2a vcc = 30v ic = 20 a ibi = - lb2 = 2a vcc = 30v vclamp=125v l = 500 u.h min. 125 7 20 10 5 1 8 20 typ. 0.3 0.7 1.6 0.5 0.6 0.15 max. 1.5 1.5 6 1 0.6 1.2 2 60 1.5 1.2 0.3 unit ma ma ma ma v v v v v a a mhz us us us a ? pulsed: pulse duration = 3qo\is, duty cycle < 2 %
BUX10 to-3 mechanical data dim. a b c d e g n p r u v mm min. 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 typ. max. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 inch min. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 typ. max. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
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